题目：Nitrogen‐Doped MoS₂Foam for Fast Sodium Ion Storage

作者：Peng Tao¹，Junjie He²，Tong Shen¹，Yu Hao¹，Jingkai Yan³，Zijie Huang³，Xueer Xu³，Meng Li⁴*，Yu Chen^1，5*

单位：

1. School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China

2. School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China.

3. College of Energy，Soochow University，Suzhou 215006, China

4. MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, CQU-NUS Renewable Energy Materials & Devices Joint Laboratory, School of Energy & Power Engineering，Chongqing University，Chongqing 400044, China

5. National University of Singapore Suzhou Research Institute, Dushu Lake Science and Education Innovation District, Suzhou 215123, P. R. China

摘要：A novel 3D porous foam consisting of interlinking N‐doped MoS₂nanosheets is synthesized through a templating‐drying‐carbonization process, where melamine‐formaldehyde is used as both template and nitrogen source. Benefit from the N‐containing MoS₂, 3D porous structure, and residual N‐doped carbon, N‐doped MoS₂foam (NMF) exhibits greatly improved electrochemical performance especially in term of rate capability for sodium storage compared with their pristine counterpart. Specifically, NMF shows outstanding rate capability with high reversible capacities reaching up to 407 mAh g⁻¹after 100 cycles under a current density of 1 A g⁻¹, whereas the charge capacity of pristine MoS₂quickly decays to 60 mAh g⁻¹after 35 cycles at the same current density. In addition, the important role of pseudocapacitive behavior in the high rate sodium storage performances of NMF is investigated by kinetics calculation. The band structure and partial density of states of NMF are calculated in order to further explore the change of electronic structure induced by N atom doping in MoS₂and its correlation with high rate performance. Furthermore, a Na⁺full‐cell with NMF anode and Na₃V₂(PO4)₃cathode is assembled and successfully powered a 2 V light‐emitting diode lamp.

影响因子：4.834

分区情况：二区

链接：https://onlinelibrary.wiley.com/doi/full/10.1002/admi.201900460